数据搜索系统,热门电子元器件搜索
  Chinese▼

Delete All
ON OFF
ALLDATASHEETCN.COM

X  



IRF6626 Datasheet(数据表) 1 Page - International Rectifier

部件型号  IRF6626
说明  DirectFET TM Power MOSFET
下载  9 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 

IRF6626 Datasheet(HTML) 1 Page - International Rectifier

   
Zoom Inzoom in Zoom Outzoom out
 1 page
background image
www.irf.com
1
11/17/05
IRF6626
DirectFET
™ Power MOSFET ‚
Description
The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical On-Resistance vs. Gate Voltage
l RoHS compliant containing no lead or bromide

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync. FET and some Control FET
applications

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET MOSFETs
ƒ Repetitive rating; pulse width limited by max. junction temperature.
„ Starting TJ = 25°C, L = 0.29mH, RG = 25Ω, IAS = 13A.
† Surface mounted on 1 in. square Cu board, steady state.
‰ TC measured with thermocouple mounted to top (Drain) of part.
Notes:
0
102030
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS= 24V
VDS= 15V
ID= 13A
DirectFET
™ ISOMETRIC
ST
SQ
SX
ST
MQ
MX
MT
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V h
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V h
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V k
IDM
Pulsed Drain Current
e
EAS
Single Pulse Avalanche Energy
f
mJ
IAR
Avalanche Current
Ãe
A
13
Max.
13
72
130
±20
30
16
24
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
19nC
6.7nC
1.6nC
5.4nC
13nC
1.8V
3
4
5
6
7
8
VGS, Gate -to -Source Voltage (V)
0
5
10
15
ID = 16A
TJ = 25°C
TJ = 125°C
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 4.0m
Ω@ 10V 5.2mΩ@ 4.5V
PD - 96976D




HTML 页

1  2  3  4  5  6  7  8  9 


数据表 下载



相关电子零件

部件型号部件说明Html View制造商
IRF6643TRPBFDirectFET Power MOSFET - Typical value unless otherwise specified 1 2 3 4 5 MoreInternational Rectifier
IRF6616DirectFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF6622DirectFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
NTD4815NHPower MOSFET 30 V 35 A Single N-Channel DPAK/IPAK 1 2 3 4 5 MoreON Semiconductor
IRFW820AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRFC240HEXFET Power MOSFET Die in Wafer Form 1 International Rectifier
IXTQ50N20PPolarHT Power MOSFET N-Channel Enhancement Mode 1 2 3 4 5 IXYS Corporation
2SK3613-01N-CHANNEL SILICON POWER MOSFET 1 2 3 4 Fuji Electric
IRF8010SPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
RD09MUP2Silicon MOSFET Power Transistor 520MHz 8W 1 2 3 4 5 MoreMitsubishi Electric Semiconductor

链接网址


Privacy Policy
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ]  

关于 Alldatasheet    |   广告服务   |   联系我们   |   隐私政策   |   书签   |   链接交换   |   制造商名单
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl