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HAT2058R 数据表(PDF) 2 Page - Renesas Technology Corp |
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HAT2058R 数据表(HTML) 2 Page - Renesas Technology Corp |
2 / 10 page HAT2058R/HAT2058RJ 2 Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Symbol HAT2058R HAT2058RJ Unit Drain to source voltage V DSS 100 100 V Gate to source voltage V GSS ±20 ±20 V Drain current I D 44 A Drain peak current I D (pulse) Note1 32 32 A Body-drain diode reverse drain current I DR 44 A Avalanche current I AP Note4 —4 A Avalanche energy E AR Note4 — 1.6 mJ Channel dissipation Pch Note2 22 W Pch Note3 33 W Channel temperature Tch 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 4. Value at Tch = 25 °C, Rg ≥ 50 Ω |
类似零件编号 - HAT2058R |
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类似说明 - HAT2058R |
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