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BU2730AL 数据表(PDF) 2 Page - NXP Semiconductors |
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BU2730AL 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 4 page Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 7.5 V; IC = 0 A - - 1.0 mA BV EBO Base-emitter breakdown voltage I B = 1 mA 7.5 14 - V V CEsat Collector-emitter saturation voltage I C = 9 A; IB = 1.8 A - - 5.0 V V BEsat Base-emitter saturation voltage I C = 9 A; IB = 1.8 A - 0.91 V h FE DC current gain I C = 1 A; VCE = 5 V - 17 - h FE I C = 9 A; VCE = 5 V 5 7.5 9.5 DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (32 kHz line I Csat = 9 A; LC = 200 µH; Cfb = 9 nF; deflection dynamic test circuit). V CC = 142 V; IB(end) = tbf ; -IBM = 4.5 A; -V BB = 4 V; LB = 5 µH t s Turn-off storage time 3.5 4.5 µs t f Turn-off fall time tbf tbf µs 2 Measured with half sine-wave voltage (curve tracer). April 1997 2 Rev 1.000 |
类似零件编号 - BU2730AL |
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类似说明 - BU2730AL |
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