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BU2725DX 数据表(PDF) 4 Page - NXP Semiconductors |
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BU2725DX 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX Fig.5. DC current gain. h FE = f (IC) Parameter T hs (Low and high gain) Fig.6. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.8. Limit storage and fall time. t s = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz BU2727D/DF 0.01 0.1 1 10 100 1 10 100 hFE IC / A VCE = 1 V Ths = 25 C Ths = 85 C 01 234 0.6 0.7 0.8 0.9 1 VBEsat / V BU2727D/DF IB / A IC = 6 A 4 A Ths = 85 C Ths = 25 C 0.1 1 10 100 0.01 0.1 1 10 BU2727D/DF VCEsat / V Ths = 85 C Ths = 25 C IC/IB = 12 IC/IB = 5 IC / A 0123 4 0 1 2 3 4 5 6 7 8 9 10 IB / A ts/tf/ us BU2527AFX,DFX September 1997 4 Rev 1.100 |
类似零件编号 - BU2725DX |
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类似说明 - BU2725DX |
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