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BU2725DF 数据表(PDF) 2 Page - NXP Semiconductors |
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BU2725DF 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to heatsink without heatsink compound - 3.7 K/W R th j-hs Junction to heatsink with heatsink compound - 2.8 K/W R th j-a Junction to ambient in free air 35 - K/W ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 7.5 V; IC = 0 A - 110 - mA B VEBO Emitter-base breakdown voltage I B = 1 mA 7.5 13.5 - V R EB Base-emitter resistance V EB = 7.5 V 70 Ω V CEsat Collector-emitter saturation voltage I C = 7.0 A; IB = 1.75 A - - 1.0 V V BEsat Base-emitter saturation voltage I C = 7.0 A; IB = 1.75 A 0.78 0.86 0.95 V V F Diode forward voltage I F = 7 A 1.4 2.2 V h FE DC current gain I C = 1 A; VCE = 5 V - 19 - h FE I C = 7 A; VCE = 1 V 3.8 5.8 7.8 DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (16 kHz line I Csat = 7.0 A; LC = 650 µH; Cfb = 18 nF; deflection circuit) V CC = 162 V; IB(end) = 1.3 A; LB = 2 µH; -V BB = 4 V; t s Turn-off storage time 1.5 2 µs t f Turn-off fall time 0.14 0.3 µs 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 |
类似零件编号 - BU2725DF |
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类似说明 - BU2725DF |
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