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BU2725 数据表(PDF) 4 Page - NXP Semiconductors |
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BU2725 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX Fig.7. DC current gain. h FE = f (IC) Parameter T hs (Low and high gain) Fig.8. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.9. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.10. Limit storage and fall time. t s = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz Fig.11. Normalised power dissipation. PD% = 100 ⋅PD/PD 25˚C = f (T hs) Fig.12. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T 0.01 0.1 1 10 100 1 10 100 hFE BU2727A/AF IC / A VCE = 1 V Ths = 25 C Ths = 85 C 0123 4 0 1 2 3 4 5 6 7 8 9 10 IB / A ts/tf/ us BU2527AFX,DFX 0.1 1 10 100 0.01 0.1 1 10 BU2727A/AF VCEsat / V Ths = 85 C Ths = 25 C IC/IB = 12 IC/IB = 5 IC / A 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 01 234 0.6 0.7 0.8 0.9 1 VBEsat / V BU2727A/AF IB / A IC = 6 A 4 A Ths = 85 C Ths = 25 C 1E-06 1E-04 1E-02 1E+00 t / s Zth / (K/W) BU2525AF 10 1 0.1 0.01 0.001 D = tp tp T T P t D D = 0 0.02 0.05 0.1 0.2 0.5 September 1997 4 Rev 1.400 |
类似零件编号 - BU2725 |
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类似说明 - BU2725 |
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