数据搜索系统,热门电子元器件搜索 |
|
BU2722 数据表(PDF) 4 Page - NXP Semiconductors |
|
BU2722 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF Fig.7. DC current gain. h FE = f (IC) Parameter T hs (Low and high gain) Fig.8. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.9. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.10. Normalised power dissipation. PD% = 100 ⋅PD/PD 25˚C = f (T hs) Fig.11. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T Fig.12. Typical storage and fall time. t s = f(IB); tf = f(IB); IC = 4.5 A; f = 64 kHz; Ths = 85 ˚C 0.01 0.1 1 10 100 1 10 100 Ths = 25 C Ths = 85 C VCE = 1 V hFE BU2720/22AF IC / A 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound BU2722AF 0.01 0.1 1 10 0.1 1 10 100 Tj = 85 C Tj = 25 C IC/IB = 8 IC/IB = 4 VCEsat / V IC / A 1E-06 1E-04 1E-02 1E+00 t / s Zth / (K/W) D = 0 0.02 0.05 0.1 0.2 0.5 D = tp tp T T P t D 10 1 0.1 0.01 0.001 BU2722AF 0 0.5 1 1.5 2 0.6 0.7 0.8 0.9 1 Tj = 25 C Tj = 85 C IC = 5.5 A 4.5 A VBEsat / V IB / A 0123 4 0.1 1 10 IB / A ts, tf / us BU2722AF September 1997 4 Rev 1.200 |
类似零件编号 - BU2722 |
|
类似说明 - BU2722 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |