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BU2720DX 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BU2720DX
功能描述  Silicon Diffused Power Transistor
Download  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BU2720DX 数据表(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2720DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
BV
EBO
Emitter-base breakdown voltage
I
B = 600 mA
7.5
13.5
-
V
R
BE
Base-emitter resistance
V
EB = 6 V
65
V
CEsat
Collector-emitter saturation voltage
I
C = 5.5 A; IB = 1.38 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 5.5 A; IB = 1.38 A
-
-
1.0
V
V
F
Diode forward voltage
I
F = 5.5 A
1.6
V
h
FE
DC current gain
I
C = 1 A; VCE = 5 V
19
h
FE
I
C = 5.5 A; VCE = 1 V
4
5.5
7.5
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (16 kHz line
I
Csat = 5.5 A; LC = 750 µH;
deflection circuit)
C
fb = 15.5 nF; VCC = 125 V;
I
B(end) = 1.2 A; LB = 6 µH; -VBB = 4 V;
-I
BM = ICM/2
t
s
Turn-off storage time
7.4
8.5
µs
t
f
Turn-off fall time
0.7
0.9
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300


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