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IXTQ96N15P Datasheet(数据表) 1 Page - IXYS Corporation |
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IXTQ96N15P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 page 
© 2004 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 175°C 150 V V DGR T J = 25°C to 175°C; RGS = 1 MΩ 150 V V GSM ±20 V I D25 T C = 25°C96 A I D(RMS) External lead current limit 75 A I DM T C = 25°C, pulse width limited by TJM 250 A I AR T C = 25°C60 A E AR T C = 25°C40 mJ E AS T C = 25°C 1.0 J dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns T J ≤ 150°C, RG = 4 Ω P D T C = 25°C 480 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +150 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C M d Mounting torque (TO-3P) 1.13/10 Nm/lb.in. Weight TO-3P 5.5 g TO-268 5.0 g G = Gate D = Drain S = Source TAB = Drain DS99131C(05/04) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. V DSS V GS = 0 V, ID = 250 µA 150 V V GS(th) V DS = VGS, ID = 250µA 2.5 5.0 V I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = VDSS 25 µA V GS = 0 V T J = 150°C 250 µA R DS(on) V GS = 10 V, ID = 0.5 ID25 24 m Ω Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PolarHTTM Power MOSFET IXTQ 96N15P V DSS = 150 V IXTT 96N15P I D25 = 96 A R DS(on) = 24 m Ω Ω Ω Ω Ω N-Channel Enhancement Mode Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. TO-3P (IXTQ) G D S (TAB) TO-268 (IXTT) G S D (TAB) Preliminary Data Sheet |
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