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IXTQ96N15P Datasheet(数据表) 4 Page - IXYS Corporation |
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IXTQ96N15P Datasheet(HTML) 4 Page - IXYS Corporation |
4 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTQ 96N15P IXTT 96N15P Fig. 11. Capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 VDS - Volts Ciss Coss Crss f = 1MHz Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 10 203040 5060 70 80 90 100 110 Q G - nanoCoulombs V DS = 75V I D = 48A I G = 10mA Fig. 7. Input Adm ittance 0 20 40 60 80 100 120 140 160 180 45 6 789 10 VG S - Volts T J = 150ºC 25ºC -40ºC Fig. 8. Transconductance 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 200 I D - Amperes T J = -40ºC 25ºC 150ºC Fig. 9. Source Current vs. Source-To-Drain Voltage 0 50 100 150 200 250 300 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VS D - Volts T J = 150ºC T J = 25ºC Fig. 12. Forw ard-Bias Safe Operating Area 1 10 100 1000 1 10 100 1000 VD S - Volts 100µs 1ms DC T J = 175ºC T C = 25ºC R DS(on) Limit 10ms 25µs |