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BU2708DF 数据表(PDF) 3 Page - NXP Semiconductors |
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BU2708DF 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DF Fig.1. Switching times waveforms. Fig.2. Switching times definitions. Fig.3. Switching times test circuit. Fig.4. DC current gain. h FE = f (IC) Parameter T hs (Low and high gain) IC IB VCE ICsat IBend 64us 26us 20us t t t TRANSISTOR DIODE + 150 v nominal adjust for ICsat Lc Cfb D.U.T. LB IBend -VBB Rbe ICsat 90 % 10 % tf ts IBend IC IB t t - IBM BU2708DF 0.01 0.1 1 10 100 1 10 100 hFE IC / A Ths = 25 C Ths = 85 C VCE = 5 V September 1997 3 Rev 1.400 |
类似零件编号 - BU2708DF |
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类似说明 - BU2708DF |
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