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BU2708AF 数据表(PDF) 4 Page - NXP Semiconductors |
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BU2708AF 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF Fig.7. DC current gain. h FE = f (IC) Parameter T hs (Low and high gain) Fig.8. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.9. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.10. Limit P tot; Tj = 85˚C P tot = f (IB(end)); IC = 3.5 A; f = 16 kHz Fig.11. Limit P tot; Tj = 85˚C P tot = f (IB(end)); IC = 4.0 A; f = 16 kHz Fig.12. Limit storage and fall time. t s = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz 0.01 0.1 1 10 100 1 10 100 hFE BU2708AF IC / A Ths = 25 C Ths = 85 C VCE = 1 V 0 0.5 1 1.5 2 1 10 PTOT / W BU2708AF/DF IB / A IC = 3.5 A f = 16 kHz Tj = 85 C 0.1 1 10 100 0.01 0.1 1 10 Tj = 85 C Tj = 25 C IC/IB = 8 IC/IB = 4 VCEsat / V IC / A BU2708AF 0 0.5 1 1.5 2 1 10 PTOT / W BU2708AF/DF IB / A IC = 4 A f = 16 kHz Tj = 85 C 0 0.5 1 1.5 2 0.6 0.7 0.8 0.9 1 1.1 1.2 Tj = 25 C Tj = 85 C VBEsat / V BU2708AF IB / A IC = 4A 3A 0 0.5 1 1.5 2 0 2 4 6 8 10 ts/tf / us BU2708AF/DF IC = 3.5A IC = 4A IB / A September 1997 4 Rev 1.200 |
类似零件编号 - BU2708AF |
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类似说明 - BU2708AF |
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