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BU2532AW 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BU2532AW
功能描述  Silicon Diffused Power Transistor
Download  6 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BU2532AW 数据表(HTML) 2 Page - NXP Semiconductors

  BU2532AW Datasheet HTML 1Page - NXP Semiconductors BU2532AW Datasheet HTML 2Page - NXP Semiconductors BU2532AW Datasheet HTML 3Page - NXP Semiconductors BU2532AW Datasheet HTML 4Page - NXP Semiconductors BU2532AW Datasheet HTML 5Page - NXP Semiconductors BU2532AW Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
EB = 7.5 V; IC = 0 A
-
-
1.0
mA
BV
EBO
Base-emitter breakdown voltage
I
B = 1 mA
7.5
14
-
V
V
CEsat
Collector-emitter saturation voltage
I
C = 7.0 A; IB = 1.17 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 7.0 A; IB = 1.17 A
0.80
0.88
0.97
V
h
FE
DC current gain
I
C = 1 A; VCE = 5 V
9
17
27
h
FE
I
C = 7 A; VCE = 5 V
6
9
12.5
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (82 kHz line
I
Csat = 7.0 A; LC = 100 µH; Cfb = 3 nF;
deflection dynamic test circuit).
V
CC = 138 V; IB(end) = 1.0 A
t
s
Turn-off storage time
1.4
1.8
µs
t
f
Turn-off fall time
0.06
0.1
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000


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