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BU2532AL 数据表(PDF) 3 Page - NXP Semiconductors |
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BU2532AL 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL Fig.3. Switching times test circuit. Fig.4. High and low DC current gain. h FE = f (IC) V CE = 1 V Fig.5. High and low DC current gain. h FE = f (IC) V CE = 5 V Fig.6. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.8. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Tmb) + 150 v nominal adjust for ICsat Lc Cfb T.U.T. LB IBend -VBB 0.1 1 10 100 0.01 0.1 1 10 VCEsat / V BU2530/2AL IC / A IC/IB = 10 IC/IB = 5 Tj = 85 C Tj = 25 C 0.01 0.1 1 10 100 1 10 100 hFE BU2530/2AL IC / A VCE = 1 V Tj = 85 C Tj = 25 C 0 1234 0.6 0.7 0.8 0.9 1 VBEsat / V BU2530/2AL IC = 9 A IC = 7 A IB / A Tj = 85 C Tj = 25 C 0.01 0.1 1 10 100 1 10 100 hFE BU2530/2AL IC / A VCE = 5 V Tj = 85 C Tj = 25 C 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 September 1997 3 Rev 1.100 |
类似零件编号 - BU2532AL |
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类似说明 - BU2532AL |
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