数据搜索系统,热门电子元器件搜索 |
|
BU2530AL 数据表(PDF) 4 Page - NXP Semiconductors |
|
BU2530AL 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AL Fig.9. Typical collector storage and fall time. ts = f (I B); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz Fig.10. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Tmb) Fig.11. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T Fig.12. Test Circuit RBSOA. V CC = 150 V; -V BB = 1 - 5 V; L C = 1.5 mH; VCL = 1450 V; LB = 1 - 3 µH; C FB = 1 - 10 nF; IB(end) = 1.3 - 2.6 A Fig.13. Reverse bias safe operating area. T j ≤ Tjmax 012 34 0 2 4 6 8 10 ts/tf / us BU2530AL IB / A LB IBend -VBB LC T.U.T. VCC VCL CFB 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 BU2530/32AL 100 1000 1500 0 10 20 30 40 IC / A VCE / V Area where fails occur 1.0E-06 1E-04 1E-02 1E+00 0.001 0.01 0.1 1 10 0.2 0.1 0.05 0.02 0.5 D = 0 Zth / K/W BU2530AL/32AL t / s D = tp tp T T P t D September 1997 4 Rev 1.200 |
类似零件编号 - BU2530AL |
|
类似说明 - BU2530AL |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |