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BU2527DF 数据表(PDF) 3 Page - NXP Semiconductors |
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BU2527DF 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF Fig.1. Switching times waveforms. Fig.2. Switching times definitions. Fig.3. Definition of anti-parallel diode V fr and tfr Fig.4. Switching times test circuit. Fig.5. Test Circuit RBSOA. V CC = 140 V; -VBB = 4 V; L C = 100 - 200 µH; VCL ≤ 1500 V; LB = 3 µH; C FB = 1 - 2.2 nF; IB(end) = 1 - 2 A Fig.6. Typical DC current gain. h FE = f (IC) parameter V CE V ICsat I end 16 us 6.5 us 5 us t t t TRANSISTOR DIODE B I C I B CE + 150 v nominal adjust for ICsat Lc Cfb D.U.T. LB IBend -VBB Rbe LB IBend -VBB LC T.U.T. VCC VCL CFB Rbe ICsat 90 % 10 % tf ts IBend IC IB t t - IBM time time V F V fr V F I F fr t 10% 5 V I F BU2525DF 0.1 1 10 100 1 10 100 hFE IC / A 5 V 1V Tj = 25 C Tj = 125 C September 1997 3 Rev 1.200 |
类似零件编号 - BU2527DF |
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类似说明 - BU2527DF |
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