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BU2525DX 数据表(PDF) 3 Page - NXP Semiconductors |
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BU2525DX 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX Fig.1. Switching times waveforms. Fig.2. Switching times definitions. Fig.3. Definition of anti-parallel diode V fr and tfr Fig.4. Switching times test circuit. Fig.5. Typical DC current gain. h FE = f (IC) parameter V CE Fig.6. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB IC IB VCE I IBend 32us 13us 10us t t t TRANSISTOR DIODE Csat + 150 v nominal adjust for ICsat Lc Cfb D.U.T. LB IBend -VBB Rbe ICsat 90 % 10 % tf ts IBend IC IB t t - IBM BU2525DF 0.1 1 10 100 1 10 100 hFE IC / A 5 V 1V Tj = 25 C Tj = 125 C time time V F V fr V F I F fr t 10% 5 V I F 0.1 1 10 IC / A VBESAT / V BU2525AF 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 Tj = 25 C Tj = 125 C IC/IB= 3 4 5 September 1997 3 Rev 1.200 |
类似零件编号 - BU2525DX |
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类似说明 - BU2525DX |
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