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BU2525DW 数据表(PDF) 3 Page - NXP Semiconductors |
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BU2525DW 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW Fig.3. Definition of anti-parallel diode V fr and tfr Fig.4. Switching times test circuit Fig.5. Typical DC current gain. h FE = f (IC) parameter V CE Fig.6. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB Fig.7. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.8. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC time time V F V fr V F I F fr t 10% 5 V I F 0.1 1 10 IC / A VBESAT / V BU2525A 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 Tj = 25 C Tj = 125 C IC/IB= 3 4 5 + 150 v nominal adjust for ICsat Lc Cfb D.U.T. LB IBend -VBB Rbe 0.1 10 IC / A VCESAT / V BU2525A 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 100 1 Tj = 25 C Tj = 125 C IC/IB = 4 5 3 0.1 1 10 100 1 10 100 hFE BU2525D IC / A 5 V 1V Tj = 25 C Tj = 125 C 0 1 2 3 4 IB / A VBESAT / V BU2525A 1.2 1.1 1 0.9 0.8 0.7 0.6 Tj = 25 C Tj = 125 C IC= 8 A 6 A 5 A 4 A September 1997 3 Rev 1.100 |
类似零件编号 - BU2525DW |
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类似说明 - BU2525DW |
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