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BU2525DW 数据表(PDF) 2 Page - NXP Semiconductors |
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BU2525DW 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 6.0 V; IC = 0 A 72 110 218 mA R EB Base-emitter resistance V EB = 6.0 V - 55 - Ω BV EBO Emitter-base breakdown voltage I B = 600 mA 7.5 13.5 - V V CEOsust Collector emitter-sustaining voltage I B = 0A;IC = 100mA; 800 - - V L= 25 mH V CEsat Collector-emitter saturation voltage I C = 8.0 A; IB = 1.6 A - - 5.0 V V BEsat Base-emitter saturation voltage I C = 8.0 A; IB = 1.6 A - - 1.1 V h FE DC current gain I C = 1 A; VCE = 5 V - 11 - h FE I C = 8 A; VCE = 5 V 5 7 9.5 V F Diode forward voltage I F = 8 A 1.6 2.0 V DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collector capacitance I E = 0 A; VCB = 10 V; f = 1 MHz 145 - pF Switching times (32 kHz line I Csat = 8.0 A; LC = 260 µH; Cfb = 13 nF; deflection circuit) I B(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V; (-dI B/dt = 1.6 A/µs) t s Turn-off storage time 3.0 4.0 µs t f Turn-off fall time 0.2 0.35 µs V fr Anti-parallel diode forward recovery I F = 8 A; dIF/dt = 50 A/µs16 V voltage t fr Anti-parallel diode forward recovery V F = 5 V 410 ns time Fig.1. Switching times waveforms. Fig.2. Switching times definitions. IC IB VCE I IBend 32us 13us 10us t t t TRANSISTOR DIODE Csat ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 |
类似零件编号 - BU2525DW |
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类似说明 - BU2525DW |
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