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BU2525DF Datasheet(数据表) 1 Page - NXP Semiconductors

部件型号  BU2525DF
说明  Silicon Diffused Power Transistor
下载  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BU2525DF Datasheet(HTML) 1 Page - NXP Semiconductors

  BU2525DF 数据表 HTML 1Page - NXP Semiconductors BU2525DF 数据表 HTML 2Page - NXP Semiconductors BU2525DF 数据表 HTML 3Page - NXP Semiconductors BU2525DF 数据表 HTML 4Page - NXP Semiconductors BU2525DF 数据表 HTML 5Page - NXP Semiconductors BU2525DF 数据表 HTML 6Page - NXP Semiconductors BU2525DF 数据表 HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
P
tot
Total power dissipation
T
hs ≤ 25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C = 8.0 A; IB = 1.6 A
-
5.0
V
I
Csat
Collector saturation current
8.0
-
A
t
s
Storage time
I
Csat = 8.0 A; IB(end) = 1.1 A
3.0
4.0
µs
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
I
B
Base current (DC)
-
8
A
I
BM
Base current peak value
-
12
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
200
mA
-I
BM
Reverse base current peak value
1
-9
A
P
tot
Total power dissipation
T
hs
25 ˚C
-
45
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
12
3
case
b
c
e
Rbe
1 Turn-off current.
September 1997
1
Rev 1.200




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