数据搜索系统,热门电子元器件搜索 |
|
BU2525DF 数据表(PDF) 4 Page - NXP Semiconductors |
|
BU2525DF 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF Fig.7. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.8. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.9. Typical collector-emitter saturation voltage. V CEsat = f (IB); parameter IC Fig.10. Typical turn-off losses. T j = 85˚C Eoff = f (I B); parameter IC; f = 32 kHz Fig.11. Typical collector storage and fall time. ts = f (I B); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz Fig.12. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Ths) 0.1 10 IC / A VCESAT / V BU2525AF 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 100 1 Tj = 25 C Tj = 125 C IC/IB = 4 5 3 0.1 1 10 IB / A Eoff / uJ BU2525AF 1000 100 10 IC = 8 A 7 A 0 1 2 3 4 IB / A VBESAT / V BU2525AF 1.2 1.1 1 0.9 0.8 0.7 0.6 Tj = 25 C Tj = 125 C IC= 8 A 6 A 5 A 4 A 0.1 1 10 IB / A ts, tf / us BU2525AF 12 11 10 9 8 7 6 5 4 3 2 1 0 32 kHz ts tf IC = 8 A 7 A 0.1 1 10 IB / A VCESAT / V BU2525AF 10 1 0.1 Tj = 25 C Tj = 125 C IC = 4 A 5 A 6 A 8 A 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound September 1997 4 Rev 1.200 |
类似零件编号 - BU2525DF |
|
类似说明 - BU2525DF |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |