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BU2525AX 数据表(PDF) 2 Page - NXP Semiconductors |
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BU2525AX 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 7.5 V; IC = 0 A - - 1.0 mA BV EBO Emitter-base breakdown voltage I B = 1 mA 7.5 13.5 - V V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 800 - - V L = 25 mH V CEsat Collector-emitter saturation voltage I C = 8.0 A; IB = 1.6 A - - 5.0 V V BEsat Base-emitter saturation voltage I C = 8.0 A; IB = 1.6 A - - 1.1 V h FE DC current gain I C = 100 mA; VCE = 5 V - 13 - h FE I C = 8 A; VCE = 5 V 5 7 9.5 DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collector capacitance I E = 0 A; VCB = 10 V; f = 1 MHz 145 - pF Switching times (32 kHz line I Csat = 8.0 A; LC = 260 µH; Cfb = 13 nF; deflection circuit) I B(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V; (-dI B/dt = 1.6 A/µs) t s Turn-off storage time 3.0 4.0 µs t f Turn-off fall time 0.2 0.35 µs 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 2.200 |
类似零件编号 - BU2525AX |
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类似说明 - BU2525AX |
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