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BU2525AW 数据表(PDF) 3 Page - NXP Semiconductors |
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BU2525AW 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW Fig.3. Switching times waveforms. Fig.4. Switching times definitions. Fig.5. Switching times test circuit (BU2525A). Fig.6. Typical DC current gain. h FE = f (IC) parameter V CE Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB Fig.8. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB IC IB VCE ICsat IBend 32us 13us 10us t t t TRANSISTOR DIODE 0.1 10 IC / A hFE BU2525A 100 10 1 100 1 Tj = 25 C Tj = 125 C 5 V 1 V ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 0.1 1 10 IC / A VBESAT / V BU2525A 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 Tj = 25 C Tj = 125 C IC/IB= 3 4 5 + 150 v nominal adjust for ICsat Lc Cfb T.U.T. LB IBend -VBB 0.1 10 IC / A VCESAT / V BU2525A 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 100 1 Tj = 25 C Tj = 125 C IC/IB = 4 5 3 September 1997 3 Rev 1.100 |
类似零件编号 - BU2525AW |
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类似说明 - BU2525AW |
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