数据搜索系统,热门电子元器件搜索 |
|
BU2525A 数据表(PDF) 5 Page - NXP Semiconductors |
|
BU2525A 数据表(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525A Fig.15. Forward bias safe operating area. T mb = 25 ˚C I CDC & ICM = f(VCE); ICM single pulse; parameter tp; Second-breakdown limits independant of temperature. BU2525A IC / A 100 10 1 0.1 0.01 1 10 100 1000 VCE / V ICM ICDC Ptot 100 us 1 ms 10 ms DC 40 us tp = = 0.01 November 1995 5 Rev 1.200 |
类似零件编号 - BU2525A |
|
类似说明 - BU2525A |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |