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BU2523DX 数据表(PDF) 5 Page - NXP Semiconductors |
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BU2523DX 数据表(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX Fig.13. Test Circuit RBSOA. V CC = 150 V; -V BB = 1 - 5 V; L C = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH; C FB = 0.5 - 8 nF; IB(end) = 0.55 - 1.1 A Fig.14. Reverse bias safe operating area. T j ≤ Tjmax Fig.15. I Csat during normal running vs. frequency of operation for optimum performance LB IBend -VBB LC T.U.T. VCC VCL CFB 0 10203040 506070 80 0 1 2 3 4 5 6 7 8 BU2523AF/AX frequency (kHz) Ic(sat) (A) 100 1000 0 10 20 30 VCE / V IC / A BU2523 Area where fails occur 1500 September 1997 5 Rev 1.200 |
类似零件编号 - BU2523DX |
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类似说明 - BU2523DX |
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