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BU2523AX 数据表(PDF) 4 Page - NXP Semiconductors |
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BU2523AX 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AX Fig.9. Typical collector storage and fall time. ts = f (I B); tf = f (IB); IC = 5.5 A; Tj = 85˚C; f = 64 kHz Fig.10. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Tmb) Fig.11. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T Fig.12. Test Circuit RBSOA. V CC = 150 V; -V BB = 1 - 5 V; L C = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH; C FB = 0.5 - 8 nF; IB(end) = 0.55 - 1.1 A Fig.13. Reverse bias safe operating area. T j ≤ Tjmax Fig.14. I Csat during normal running vs. frequency of operation for optimum performance 0 0.5 1 1.5 2 0 1 2 3 4 5 ts/tf / us BU2523AF/DF/AX/DX IB / A LB IBend -VBB LC T.U.T. VCC VCL CFB 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 100 1000 0 10 20 30 VCE / V IC / A BU2523 Area where fails occur 1500 0 10203040 506070 80 0 1 2 3 4 5 6 7 8 BU2523AF/AX frequency (kHz) Ic(sat) (A) 1E-06 1E-04 1E-02 1E+00 t / s Zth / (K/W) BU2525AF 10 1 0.1 0.01 0.001 D = tp tp T T P t D D = 0 0.02 0.05 0.1 0.2 0.5 September 1997 4 Rev 1.100 |
类似零件编号 - BU2523AX |
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类似说明 - BU2523AX |
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