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BU2523 数据表(PDF) 3 Page - NXP Semiconductors |
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BU2523 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF Fig.3. Switching times test circuit. Fig.4. High and low DC current gain. h FE = f (IC) V CE = 1 V Fig.5. High and low DC current gain. h FE = f (IC) V CE = 5 V Fig.6. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.8. Typical losses. P TOT = f (IB); IC =5.5 A; f = 64 kHz + 150 v nominal adjust for ICsat Lc Cfb T.U.T. LB IBend -VBB 0.1 1 10 100 0.01 0.1 1 10 Ths = 25 C Ths = 85 C IC/IB = 10 IC/IB = 5 VCEsat / V BU2523AF/X IC / A BU2523AF/X 0.01 0.1 1 10 100 1 10 100 VCE = 1 V Ths = 25 C Ths = 85 C hFE IC / A 01 23 4 0.6 0.7 0.8 0.9 1 1.1 1.2 VBEsat / V BU2523AF/X IB / A IC = 6 A IC = 4.5 A Ths = 25 C Ths = 85 C BU2523AF/X 0.01 0.1 1 10 100 1 10 100 VCE = 5 V Ths = 25 C Ths = 85 C hFE IC / A BU2523AF/DF/AX/DX 0 0.5 1 1.5 2 1 10 100 PTOT / W IB / A Ths = 25 C Ths = 85 C September 1997 3 Rev 1.100 |
类似零件编号 - BU2523 |
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类似说明 - BU2523 |
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