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BYC10-600CT 数据表(PDF) 4 Page - NXP Semiconductors |
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BYC10-600CT 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss Fig.9. Definition of reverse recovery parameters t rr, Irrm Fig.10. Typical forward recovery voltage per diode, V fr as a function of rate of change of current dI F/dt. Fig.11. Definition of forward recovery voltage V fr Fig.12. Typical and maximum forward characteristic per diode, I F = f(VF); Tj = 25˚C and 150˚C. Fig.13. Typical reverse leakage current per diode as a function of reverse voltage. I R = f(VR); parameter Tj Fig.14. Maximum thermal impedance per diode, Z th j-mb as a function of pulse width. Q s 100% 10% time dI dt F I R I F I rrm t rr 012 34 0 2 4 6 8 10 BYC5-600 Forward voltage, VF (V) Forward current, IF (A) max typ Tj = 25 C Tj = 150 C 0 50 100 150 200 0 5 10 15 20 BYC5-600 Tj = 25 C Rate of change of current, dIF/dt (A/ s) Peak forward recovery voltage, Vfr (V) typ IF = 10 A 0 100 200 300 400 500 600 1uA 10uA 100uA 1mA 10mA 100mA BYC5-600 Reverse voltage (V) Reverse leakage current (A) Tj = 125 C 100 C 75 C 50 C 25 C time time V F V fr V F I F 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 BYV29 pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T T P t D October 1999 4 Rev 1.000 |
类似零件编号 - BYC10-600CT |
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类似说明 - BYC10-600CT |
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