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2SK3230 Datasheet(数据表) 3 Page - NEC

部件型号  2SK3230
说明  N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
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制造商  NEC [NEC]
网页  http://www.nec.com/
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2SK3230 Datasheet(HTML) 3 Page - NEC

   
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Data Sheet D15942EJ1V0DS
3
2SK3230
TYPICAL CHARACTERISTICS (TA = 25°C)
20
40
60
80
100
120 140
160
0
40
20
80
60
100
DERATING FACTOR OF
POWER DISSIPATION
TA - Ambient Temperature - ˚C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
−30
−40
−20
−10
40
−0.2
−0.4
−0.6
−0.8
−1.0
1.0
0.8
0.6
0.4
0.2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
−0.6
−0.4
−0.2
0
+0.2
0.2
0.6
0.4
0.8
1.0
VDS = 5 V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
20
50
100
VDS - Drain to Source Voltage - V
10
20
50
100
1
2
5
15
2
VDS = 0 V
f = 1.0 MHz
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
Zero-Gate Voltage Drain Current - A
VDS = 5 V
1.0
0.5
0.2
0.1
0.05
0.02
10.0
20
50
100
200
500
1000
0.01
5.0
2.0
10
µ
VGS (off)
|yfs|




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