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BU2522AF 数据表(PDF) 4 Page - NXP Semiconductors |
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BU2522AF 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF Fig.7. Typical DC current gain. h FE = f (IC) V CE = 5 V Fig.8. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB Fig.9. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.10. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.11. Typical turn-off losses. T j = 85˚C Poff = f (I B); parameter IC = 6 A; f = 64 kHz Fig.12. Typical collector storage and fall time. ts = f (I B); tf = f (IB); parameter IC = 6A; Tj = 85˚C; f = 64 kHz 0.01 0.1 1 10 100 IC / A BU2522A 100 10 1 h FE Tj = 25 C Tj = -40 C Tj = 85 C 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IB / A 1.2 1.1 1 0.9 0.8 0.7 0.6 BU2522A VBESAT / V Tj = 25 C Tj = 85 C IC = 7A 6A 5A BU2522AF/DF/AX/DX 0 0.5 1 1.5 2 1 10 100 IB / A PTOT / W Ths = 25 C Ths = 85 C 0.1 1 10 IC / A 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 VBESAT / V BU2522A Tj = 25 C Tj = 85 C IC/IB = 3 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IB / A ts, tf / us BU2522AF 4 3.5 3 2.5 2 1.5 1 0.5 0 IC = 6A 5A 0.1 10 IC / A VCESAT / V 10 1 0.1 0.01 100 1 BU2522A Tj = 25 C Tj = 85 C IC/IB = 3 5 September 1997 4 Rev 1.400 |
类似零件编号 - BU2522AF |
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类似说明 - BU2522AF |
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