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BU2522A 数据表(PDF) 4 Page - NXP Semiconductors |
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BU2522A 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A Fig.9. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.10. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.11. Typical turn-off losses. T j = 85˚C Poff = f (I B); parameter IC; f = 64 kHz Fig.12. Typical collector storage and fall time. ts = f (I B); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz Fig.13. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Tmb) Fig.14. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T 0.1 10 IC / A VCESAT / V 10 1 0.1 0.01 100 1 BU2522A Tj = 25 C Tj = 85 C IC/IB = 3 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IB / A ts, tf / us BU2522AF 4 3.5 3 2.5 2 1.5 1 0.5 0 IC = 6A 5A 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IB / A 1.2 1.1 1 0.9 0.8 0.7 0.6 BU2522A VBESAT / V Tj = 25 C Tj = 85 C IC = 7A 6A 5A 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IB / A Poff / W BU2522AF 100 10 1 IC = 6A 5A 1E-06 1E-04 1E-02 1E+00 t / s Zth / (K/W) 10 1 0.1 0.01 0.001 D = tp tp T T P t D D = 0 0.02 0.05 0.1 0.2 0.5 November 1995 4 Rev 1.100 |
类似零件编号 - BU2522A |
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类似说明 - BU2522A |
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