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BU2522A 数据表(PDF) 1 Page - NXP Semiconductors |
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BU2522A 数据表(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 10 A I CM Collector current peak value - 25 A P tot Total power dissipation T mb ≤ 25 ˚C - 125 W V CEsat Collector-emitter saturation voltage I C = 6.0 A; IB = 1.76 A - 5.0 V I Csat Collector saturation current 6.0 - A t s Storage time I CM = 6.0 A; IB(end) = 0.7 A 1.7 2.0 µs PINNING - SOT93 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 10 A I CM Collector current peak value - 25 A I B Base current (DC) - 6 A I BM Base current peak value - 9 A -I B(AV) Reverse base current average over any 20 ms period - 150 mA -I BM Reverse base current peak value 1 -6 A P tot Total power dissipation T mb ≤ 25 ˚C - 125 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - 1.0 K/W R th j-a Junction to ambient in free air 45 - K/W 123 tab b c e 1 Turn-off current. November 1995 1 Rev 1.100 |
类似零件编号 - BU2522A |
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类似说明 - BU2522A |
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