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BU2520DW 数据表(PDF) 1 Page - NXP Semiconductors |
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BU2520DW 数据表(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 10 A I CM Collector current peak value - 25 A P tot Total power dissipation T mb ≤ 25 ˚C - 125 W V CEsat Collector-emitter saturation voltage I C = 6.0 A; IB = 1.2 A - 5.0 V I Csat Collector saturation current 6 - A V F Diode forward voltage I F = 6.0 A - 2.2 V t f Fall time I Csat = 6.0 A; IB(end) = 1.0 A 0.35 0.5 µs PINNING - SOT429 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 10 A I CM Collector current peak value - 25 A I B Base current (DC) - 6 A I BM Base current peak value - 9 A -I B(AV) Reverse base current average over any 20 ms period - 150 mA -I BM Reverse base current peak value 1 -6 A P tot Total power dissipation T mb ≤ 25 ˚C - 125 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - - 1.0 K/W R th j-a Junction to ambient in free air 45 - K/W 2 3 1 b c e Rbe 1 Turn-off current. September 1997 1 Rev 1.100 |
类似零件编号 - BU2520DW |
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类似说明 - BU2520DW |
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