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BU2520DF 数据表(PDF) 4 Page - NXP Semiconductors |
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BU2520DF 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.8. Typical collector-emitter saturation voltage. V CEsat = f (IB); parameter IC Fig.9. Typical turn-off losses. T j = 85˚C Eoff = f (I B); parameter IC; parameter frequency Fig.10. Typical collector storage and fall time. ts = f (I B); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz Fig.11. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Ths) Fig.12. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T 0 1 2 3 4 IB / A VBESAT / V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 Tj = 25 C Tj = 125 C IC= 8 A 6 A 5 A 4 A 0.1 1 10 IB / A ts, tf / us 12 11 10 9 8 7 6 5 4 3 2 1 0 ts tf IC = 6 A 5 A 0.1 1 10 IB / A VCESAT / V 10 1 0.1 Tj = 25 C Tj = 125 C IC = 4 A 5 A 6 A 8 A 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 0.1 1 10 IB / A Eoff / uJ 1000 100 10 IC = 6 A 5 A 1E-06 1E-04 1E-02 1E+00 t / s Zth / (K/W) D = 0 0.02 0.05 0.1 0.2 0.5 D = tp tp T T P t D 10 1 0.1 0.01 0.001 September 1997 4 Rev 1.400 |
类似零件编号 - BU2520DF |
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类似说明 - BU2520DF |
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