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BU2515DX 数据表(PDF) 3 Page - NXP Semiconductors |
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BU2515DX 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DX Fig.1. Switching times waveforms. Fig.2. Switching times definitions. Fig.3. Definition of anti-parallel diode V fr and tfr. Fig.4. Switching times test circuit. Fig.5. High and low DC current gain. h FE = f (IC) V CE = 1 V Fig.6. High and low DC current gain. h FE = f (IC) V CE = 5 V IC IB VCE ICsat IBend 18us 8.8us t t t TRANSISTOR DIODE + 150 v nominal adjust for ICsat Lc Cfb D.U.T. LB IBend -VBB Rbe ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 0.01 0.1 1 10 100 1 10 100 VCE = 1 V Ths = 25 C Ths = 85 C hFE BU2515DF/X IC / A time time V F V fr V F I F fr t 10% 5 V I F BU2515DF/X 0.01 0.1 1 10 100 1 10 100 VCE = 5 V Ths = 25 C Ths = 85 C hFE IC / A September 1997 3 Rev 1.300 |
类似零件编号 - BU2515DX |
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类似说明 - BU2515DX |
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