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STD5NK50Z 数据表(PDF) 3 Page - STMicroelectronics |
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STD5NK50Z 数据表(HTML) 3 Page - STMicroelectronics |
3 / 14 page 3/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1 mA, VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 50µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 2.2 A 1.22 1.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15 V, ID = 2.2 A 3.1 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 535 75 17 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 400V 45 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =250 V, ID = 2.2 A RG = 4.7Ω VGS =10 V (Resistive Load see, Figure 3) 15 10 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =400V, ID = 4.4 A, VGS =10V 20 4 10 28 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 250 V, ID = 2.2A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 32 15 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 400V, ID = 4.4A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 12 12 20 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 4.4 17.6 A A VSD (1) Forward On Voltage ISD = 4.4 A, VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =4.4 A, di/dt = 100A/µs VDD =30V, Tj = 150°C (see test circuit, Figure 5) 310 1425 9.2 ns nC A |
类似零件编号 - STD5NK50Z |
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类似说明 - STD5NK50Z |
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