2N6796 datasheet(5/5 Pages) ETC2

部件名	2N6796

功能描述	100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

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制造商	ETC2 [List of Unclassifed Manufacturers]

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Parameter

Min.

Typ.

Max.

Units

Test Conditions

BV

DSS

Drain-Source

500

V

GS = 0

V, I

D =1.0 mA,

Breakdown Voltage

R

DS(on)

Static Drain-to-Source

-

--

-

1.5

V

GS = 1

0 V, I

D = 1.5 A

3

On-State Resistance

-

--

-

1.6

V

GS = 1

0 V, I

D = 2.5 A

3

V

GS(th)

Gate Threshold Voltage

2.0

-

4.0

V

DS

= V

GS,

I

D = 250 µA

I

DSS

Zero Gate Voltage Drain

-

--

-

25

µA

V

DS = 400 V, VGS = 0V

Current

-

--

-

250

V

DS = 400 V, VGS = 0V, TJ = 125°C

I

GSS

Gate -to-Source Leakage Forward

-

--

-

100

nA

V

GS = 20 V

I

GSS

Gate -to-Source Leakage Reverse

-

--

-

-100

nA

V

GS = -20 V

Q

G(on)

On-state Gate Charge

-

--

-

29.5

nC

V

GS = 1

0 V, I

D = 2.5 A

Q

GS

Gate-to-Source Charge

-

--

-

4.5

nC

V

DS = 250 V

Q

Gd

Gate-to-Drain (“Miller”) Charge

-

--

-

28.1

nC

See note 4

t

D(on)

Turn-On Delay Time

-

--

-

-30

ns

V

DD = 225 V, ID = 1.5 A, RG = 7.5

t

r

Rise Time

-

--

-

30

ns

See note 4

t

D(off)

Turn-Off Delay Time

-

--

-

-55

ns

t

r

Fall Time

-

--

-

-30

ns

Source-Drain Diode Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

V

SD

Diode Forward Voltage

-

--

-

1.4

V

T

J

= 25°C, I

S

= 2.5 A

3,VGS = 0 V

t

r

Reverse Recovery Time

-

--

-

900

ns

T

J = 25°C, IF= 2.5 A,d

i/dt<100A/µs

3

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

Test Conditions

R

thJC

Junction-to-Case

-

--

-

5.0

Mounting surface flat,

R

thCS

Case-to-sink

-

0.21

-

°C/W

smooth, and greased

R

thJA

Junction-to-Ambient

-

--

-

175

Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

@V

DD= 50 V, Starting TJ = 25°C, L = 100 uH + 10%, RG = 25

, Peak I

L = 2.5 A

3. Pulse width < 300 µs; Duty Cycle < 2%

4. See MIL-S-19500/557

205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

Parameter

JANTXV, JANTX, 2N6802

Units

I

D @

V

GS = 10V, TC = 25°C

Continuous Drain Current

2.5

A

I

D @

V

GS = 10V, TC = 100°C

Continuous Drain Current

1.5

A

I

DM

Pulsed Drain Current

1

11

A

P

D @

T

C = 25°C

Maximum Power Dissipation

25

W

Linear Derating Factor

0.20

W/°C

V

GS

Gate-Source Voltage

± 20

V

E

AS

Single Pulse Avalanche Energy

2

.35

4

mJ

TJ

Operating Junction

-55 to 150

°C

TSTG

Storage Temperature Range

Lead Temperature

300 (.06 from case for 10 sec)

°C

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

ABSOLUTE MAXIMUM RATINGS (T

C = 25°C unless otherwise noted

2N6796, JANTX2N6796 JANTXV2N6796

2N6800, JANTX2N6800, JANTXV2N6800

2N6798, JANTX2N6798 JANTXV2N6798

2N6802, JANTX2N6802, JANTXV2N6802

类似零件编号 - 2N6796

制造商	部件名	数据表	功能描述
Seme LAB	2N6796	18Kb / 2P	TMOS FET TRANSISTOR N - CHANNEL
Intersil Corporation	2N6796	140Kb / 7P	8A, 100V, 0.180 Ohm, N-Channel Power MOSFET November 1998
Microsemi Corporation	2N6796	102Kb / 2P	N-CHANNEL MOSFET
Microsemi Corporation	2N6796	182Kb / 4P	N-CHANNEL MOSFET
Seme LAB	2N6796	22Kb / 2P	TMOS FET ENHANCEMENT N - CHANNEL

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