数据搜索系统,热门电子元器件搜索
  Chinese▼

Delete All
ON OFF
ALLDATASHEETCN.COM

X  

预览 PDF Download HTML

2N6796 Datasheet(数据表) 4 Page - List of Unclassifed Manufacturers

部件型号  2N6796
说明  100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
下载  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  ETC2 [List of Unclassifed Manufacturers]
网页  
标志 

2N6796 Datasheet(HTML) 4 Page - List of Unclassifed Manufacturers

   
Zoom Inzoom in Zoom Outzoom out
 4 page
background image
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
400
V
V
GS = 0
V, I
D =1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
-
--
-
-
1.0
V
GS = 1
0 V, I
D = 2.0 A
3
On-State Resistance
-
-
--
-
-
1.10
V
GS = 1
0 V, I
D = 3.0 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
-
-
4.0
V
V
DS
= V
GS,
I
D = 250 µA
I
DSS
Zero Gate Voltage Drain
-
-
--
-
-
25
µA
V
DS = 320 V, VGS = 0V
Current
-
-
--
-
-
250
V
DS = 320 V, VGS = 0V, TJ = 125°C
I
GSS
Gate -to-Source Leakage Forward
-
-
--
-
-
100
nA
V
GS = 20 V
I
GSS
Gate -to-Source Leakage Reverse
-
-
--
-
-
-100
nA
V
GS = -20 V
Q
G(on)
On-state Gate Charge
-
-
--
-
-33
nC
V
GS = 1
0 V, I
D = 3.0A
Q
GS
Gate-to-Source Charge
-
-
--
-
-
5.8
nC
V
DS = 200 V
Q
Gd
Gate-to-Drain (“Miller”) Charge
-
-
--
-
-
16.6
nC
See note 4
t
D(on)
Turn-On Delay Time
-
-
--
-
-30
ns
V
DD = 176 V, ID = 2 A, RG =7.5
t
r
Rise Time
-
-
--
-
-
35
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
-
--
-
-55
ns
t
r
Fall Time
-
-
--
-
-35
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
SD
Diode Forward Voltage
-
-
--
-
-
1.4
V
T
J
= 25°C, I
S
= 3 A
3,VGS = 0 V
t
t
r
r
Reverse Recovery Time
-
-
--
-
-
700
ns
T
J = 25°C, IF= 3.0 A,d
i/dt<100A/µs
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
-
--
-
-
5.0
Mounting surface flat,
R
thCS
Case-to-sink
-
-
-
0.21
-
-
-
°C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
-
--
-
-
175
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
@V
DD= 50 V, Starting TJ = 25°C, L = 100 µH + 10%, RG = 25
, Peak I
L = 3.0 A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N6800
Units
I
D @
V
GS = 10V, TC = 25°C
Continuous Drain Current
3.0
A
I
D @
V
GS = 10V, TC = 100°C
Continuous Drain Current
2.0
A
I
DM
Pulsed Drain Current
1
14
A
P
D @
T
C = 25°C
Maximum Power Dissipation
25
W
Linear Derating Factor
0.2
W/°C
V
GS
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
0.51
4
mJ
TJ
Operating Junction
-55 to 150
°C
TSTG
Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise noted
2N6796, JANTX2N6796 JANTXV2N6796
2N6800, JANTX2N6800, JANTXV2N6800
2N6798, JANTX2N6798 JANTXV2N6798
2N6802, JANTX2N6802, JANTXV2N6802




HTML 页

1  2  3  4  5 


数据表 下载



相关电子零件

部件型号部件说明Html View制造商
IRF630FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 1 2 3 4 5 MoreSTMicroelectronics
IXTQ50N20PPolarHT Power MOSFET N-Channel Enhancement Mode 1 2 3 4 5 IXYS Corporation
PJD15N06L60V N-Channel Enhancement Mode MOSFET 1 2 3 4 Pan Jit International Inc.
PJD09N0325V N-Channel Enhancement Mode MOSFET 1 2 3 4 Pan Jit International Inc.
PJD03N0325V N-Channel Enhancement Mode MOSFET 1 2 3 4 Pan Jit International Inc.
PJD06N0325V N-Channel Enhancement Mode MOSFET 1 2 3 4 Pan Jit International Inc.
PJP75N0660V N-Channel Enhancement Mode MOSFET 1 2 3 4 Pan Jit International Inc.
PJP75N7575V N-Channel Enhancement Mode MOSFET 1 2 3 4 Pan Jit International Inc.
APM7312Dual N-Channel Enhancement Mode MOSFET 1 2 3 4 5 MoreAnpec Electronics Coropration
P75N02LDN-Channel Logic Level Enhancement Mode Field Effect Transistor 1 2 3 List of Unclassifed Manufacturers

链接网址


Privacy Policy
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ]  

关于 Alldatasheet    |   广告服务   |   联系我们   |   隐私政策   |   书签   |   链接交换   |   制造商名单
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl