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BU1706AB 数据表(PDF) 2 Page - NXP Semiconductors |
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BU1706AB 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 1 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = 1500 V - - 20 µA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 12 V; IC = 0 A - - 1 mA V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 750 - - V L = 25 mH V CEsat Collector-emitter saturation voltage I C = 1.5 A; IB = 0.3 A - - 1.0 V V BEsat Base-emitter saturation voltage I C = 1.5 A; IB = 0.3 A - - 1.3 V h FE DC current gain I C = 5 mA; VCE = 10 V 8 - - h FE I C = 400 mA; VCE = 3 V 12 18 35 h FE I C = 1.5 A; VCE = 1 V 5 7 - DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load) I Con = 1.5 A; IBon = -IBoff = 0.3 A t on Turn-on time 1.1 1.5 µs t s Turn-off storage time 5 6.5 µs t f Turn-off fall time 0.75 1.0 µs Switching times (inductive load) I Con = 1.5 A; IBon = 0.3 A; LB = 1 µH; -V BB = 5 V t s Turn-off storage time 2.0 3.0 µs t f Turn-off fall time 0.25 0.6 µs Switching times (inductive load) I Con = 1.5 A; IBon = 0.3 A; LB = 1 µH; -V BB = 5 V; Tj = 100 ˚C t s Turn-off storage time 2.2 3.3 µs t f Turn-off fall time 0.2 0.7 µs Fig.1. Test circuit for V CEOsust. Fig.2. Oscilloscope display for V CEOsust. + 50v 100-200R Horizontal Vertical Oscilloscope 1R 6V 30-60 Hz 300R VCE / V min VCEOsust IC / mA 100 200 250 0 1 Measured with half sine-wave voltage (curve tracer). February 1998 2 Rev 1.000 |
类似零件编号 - BU1706AB |
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类似说明 - BU1706AB |
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