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BU1506DX Datasheet(数据表) 5 Page - NXP Semiconductors

部件型号  BU1506DX
说明  Silicon Diffused Power Transistor
下载  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BU1506DX Datasheet(HTML) 5 Page - NXP Semiconductors

  BU1506DX 数据表 HTML 1Page - NXP Semiconductors BU1506DX 数据表 HTML 2Page - NXP Semiconductors BU1506DX 数据表 HTML 3Page - NXP Semiconductors BU1506DX 数据表 HTML 4Page - NXP Semiconductors BU1506DX 数据表 HTML 5Page - NXP Semiconductors BU1506DX 数据表 HTML 6Page - NXP Semiconductors BU1506DX 数据表 HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
Fig.12. Forward bias safe operating area. T
hs = 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted with heatsink compound and
30
± 5 newton force on the centre of
the envelope.
Fig.13. Forward bias safe operating area. T
hs = 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted without heatsink compound and
30
± 5 newton force on the centre of
the envelope.
1
100
100
10
1
0.1
0.01
10
1000
I
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
Ptot max
= 0.01
II
1
100
100
10
1
0.1
0.01
10
1000
I
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
II
= 0.01
Ptot max
September 1997
5
Rev 1.300




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