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ISP1016E Datasheet(数据表) 3 Page - Lattice Semiconductor |
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ISP1016E Datasheet(HTML) 3 Page - Lattice Semiconductor |
3 page ![]() 3 1996 ISP Encyclopedia Specifications ispLSI and pLSI 1016E Absolute Maximum Ratings 1 Supply Voltage VCC .................................-0.5 to +7.0V Input Voltage Applied ........................ -2.5 to VCC +1.0V Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V Storage Temperature ................................ -65 to 150 °C Case Temp. with Power Applied .............. -55 to 125 °C Max. Junction Temp. (TJ) with Power Applied ... 150°C 1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specifica tion is not implied (while programming, follow the programming specifications). DC Recommended Operating Conditions TA = 0°C to + 70°C TA = -40°C to + 85°C SYMBOL Table 2-0005/1016E VCC VIH VIL PARAMETER Supply Voltage Input High Voltage Input Low Voltage MIN. MAX. UNITS 4.75 4.5 2.0 0 5.25 5.5 Vcc+1 0.8 V V V V Commercial Industrial Capacitance (T A=25 oC, f=1.0 MHz) Data Retention Specifications C SYMBOL Table 2-0006/1016E C PARAMETER Y0 Clock Capacitance 12 UNITS TYPICAL TEST CONDITIONS 1 2 8 Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance (Commercial/Industrial) pf pf V = 5.0V, V = 2.0V V = 5.0V, V = 2.0V CC CC PIN PIN Table 2-0008/1016E PARAMETER pLSI Erase/Reprogram Cycles 100 Data Retention MINIMUM MAXIMUM UNITS ispLSI Erase/Reprogram Cycles 20 10000 – – – Cycles Years Cycles |