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BTA208X-800F 数据表(PDF) 2 Page - NXP Semiconductors |
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BTA208X-800F 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 8 page October 1999 2 Rev 1.200 Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation BTA208X series D, E and F GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in motor control circuits BTA208X- 600D - or with other highly inductive loads. BTA208X- 600E 800E These devices balance the BTA208X- 600F 800F requirements of commutation V DRM Repetitive peak off-state 600 800 V performance and gate sensitivity. The voltages "sensitive gate" E series and "logic level" I T(RMS) RMS on-state current 8 8 A D series are intended for interfacing with I TSM Non-repetitive peak on-state 65 65 A low power drivers, including micro current controllers. PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -600 -800 V DRM Repetitive peak off-state - 600 1 800 V voltages I T(RMS) RMS on-state current full sine wave; - 8 A T hs ≤ 73 ˚C I TSM Non-repetitive peak full sine wave; on-state current T j = 25 ˚C prior to surge t = 20 ms - 65 A t = 16.7 ms - 72 A I 2tI2t for fusing t = 10 ms - 21 A 2s dI T/dt Repetitive rate of rise of I TM = 12 A; IG = 0.2 A; 100 A/ µs on-state current after dI G/dt = 0.2 A/µs triggering I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms - 0.5 W period T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature T1 T2 G 12 3 case 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/ µs. |
类似零件编号 - BTA208X-800F |
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类似说明 - BTA208X-800F |
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