HY67V161610D datasheet(3/11 Pages) HYNIX

部件名	HY67V161610D

功能描述	2 Banks x 512K x 16 Bit Synchronous DRAM

Download	11 Pages

Scroll/Zoom	100%

制造商	HYNIX [Hynix Semiconductor]

网页	http://www.skhynix.com/kor/main.do

标志

3 / 11 page

HY57V161610D

Rev. 3.6/Apr.01

3

FUNCT IONAL BLOCK D IAGRAM

1Mx16 Synchronous DRAM

Column Addr.

Latch & Counter

Burst Length

Counter

Refresh

Interval Timer

Refresh

Counter

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

Address

Register

I/O Control

Test Mode

Mode Register

Self Refresh Counter

Column Decoder

Sense AMP & I/O gates

512 Kx16

Bank 0

Column Decoder

Sense AMP & I/O gates

512 Kx16

Bank 1

RAS

CAS

CS

WE

UDQM

LDQM

CKE

Precharge

Overflow

Column Active

Row Active

Address[0:10]

CLK

BA(A11)

类似零件编号 - HY67V161610D

制造商	部件名	数据表	功能描述
HUAYI MICROELECTRONICS ...	HY6060W	881Kb / 5P	Switching Power Supplies
HY ELECTRONIC CORP.	HY60FR060EP	368Kb / 3P	Fast Recovery Epitaxial Diode
HY ELECTRONIC CORP.	HY60FR060EP	368Kb / 3P	Fast Recovery Epitaxial Diode
List of Unclassifed Man...	HY6116A	379Kb / 11P	2K X 8-bit CMOS SRAM
List of Unclassifed Man...	HY6116ALP	379Kb / 11P	2K X 8-bit CMOS SRAM

More results

类似说明 - HY67V161610D

制造商	部件名	数据表	功能描述
Hynix Semiconductor	HY57V161610D	73Kb / 13P	2 Banks x 512K x 16 Bit Synchronous DRAM
A-Data Technology	ADS4616A4A	530Kb / 8P	Synchronous DRAM(512K X 16 Bit X 2 Banks) Rev 1 December, 2001
AMIC Technology	A43L0616B	585Kb / 48P	512K X 16 Bit X 2 Banks Synchronous DRAM
	A43L0616B	1Mb / 45P	512K X 16 Bit X 2 Banks Synchronous DRAM
	A43L0616A	1,011Kb / 45P	512K X 16 Bit X 2 Banks Synchronous DRAM
	A43E06161	1Mb / 46P	512K X 16 Bit X 2 Banks Synchronous DRAM
A-Data Technology	VDS4616A4A	542Kb / 8P	Synchronous DRAM(512K X 16 Bit X 2 Banks) Rev 1 December, 2001
Hynix Semiconductor	HY57V161610ET-I	482Kb / 13P	2 Banks x 512K x 16 Bit Synchronous DRAM
	HY57V161610D-I	574Kb / 11P	2 Banks x 512K x 16 Bit Synchronous DRAM
	HY57V161610ETP-I	215Kb / 13P	2 Banks x 512K x 16 Bit Synchronous DRAM