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2SK3613-01 数据表(PDF) 2 Page - Fuji Electric

部件名 2SK3613-01
功能描述  N-CHANNEL SILICON POWER MOSFET
Download  4 Pages
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制造商  FUJI [Fuji Electric]
网页  http://www.fujielectric.co.jp/eng/fdt/scd
标志 FUJI - Fuji Electric

2SK3613-01 数据表(HTML) 2 Page - Fuji Electric

  2SK3613-01 Datasheet HTML 1Page - Fuji Electric 2SK3613-01 Datasheet HTML 2Page - Fuji Electric 2SK3613-01 Datasheet HTML 3Page - Fuji Electric 2SK3613-01 Datasheet HTML 4Page - Fuji Electric  
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2
Characteristics
2SK3613-01
FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
0
25
50
75
100
125
150
0
1
2
3
4
5
Surface mounted on
1000mm
2
,t=1.6mm FR-4 PCB
(Drain pad area : 500mm
2
)
Allowable Power Dissipation
PD=f(Tc)
Tc [
°C]
0
2468
10
12
0
5
10
15
20
25
30
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
123
45
678
9
10
0.1
1
10
100
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
ID [A]
Typical Transconductance
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Allowable Power Dissipation
PD=f(Tc)
Tc [
°C]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
I
AS
=6A
I
AS
=14A
I
AS
=9A
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=48V


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