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IRFBE30LPBF 数据表(PDF) 7 Page - International Rectifier |
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IRFBE30LPBF 数据表(HTML) 7 Page - International Rectifier |
7 / 10 page IRFBE30S/LPbF www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Peak Diode Recovery dv/dt Test Circuit *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig-14 For N -Channel HEXFETS |
类似零件编号 - IRFBE30LPBF |
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类似说明 - IRFBE30LPBF |
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