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IXTQ50N20P Datasheet(数据表) 1 Page - IXYS Corporation

部件型号  IXTQ50N20P
说明  PolarHT Power MOSFET N-Channel Enhancement Mode
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
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IXTQ50N20P Datasheet(HTML) 1 Page - IXYS Corporation

   
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© 2004 IXYS All rights reserved
G
D
S
(TAB)
G
S
(TAB)
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J = 25°C to 175°C
200
V
V
DGR
T
J = 25°C to 175°C; RGS = 1 MΩ
200
V
V
GSM
±20
V
I
D25
T
C = 25°C50
A
I
DM
T
C = 25°C, pulse width limited by TJM
120
A
I
AR
T
C = 25°C50
A
E
AR
T
C = 25°C30
mJ
E
AS
T
C = 25°C
1.0
J
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
T
J ≤ 150°C, RG = 10 Ω
P
D
T
C = 25°C
360
W
T
J
-55 ... +175
°C
T
JM
175
°C
T
stg
-55 ... +125
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
Maximum tab temperature for soldering
260
°C
TO-263 package for 10s
M
d
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-220
4
g
TO-263
3
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99156A(04/04)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS = 0 V, ID = 250 µA
200
V
V
GS(th)
V
DS = VGS, ID = 250µA
2.5
5.0
V
I
GSS
V
GS = ±20 VDC, VDS = 0
±100
nA
I
DSS
V
DS = VDSS
25
µA
V
GS = 0 V
T
J = 150°C
250
µA
R
DS(on)
V
GS = 10 V, ID = IT
50
60
m
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-263 (I
XTA)
TO-220 (I
XTP)
D
(TAB)
G
S
IXTQ 50N20P
IXTA 50N20P
IXTP 50N20P
V
DSS
= 200
V
I
D25
=
50
A
R
DS(on) =
60 m
TO-3P (I
XTQ)
Preliminary Data Sheet




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