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2SK3880 Datasheet(数据表) 3 Page - Toshiba Semiconductor

部件型号  2SK3880
说明  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
下载  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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2SK3880 Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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2SK3880
2005-01-18
3
0.1
1
10
100
0.1
1
10
100
Common source
VDS=20V
Pulse test
Ta=100℃
-55
25
0
4
8
12
16
20
04
8
12
16
20
Common source
Ta=25℃
Pulse test
ID=7A
3.5
1.5
0
4
8
12
16
02
46
8
10
Common source
VDS=20V
Pulse test
Ta=100℃
25
-55
0
2
4
6
8
10
0
10
20
30
40
50
VGS=4.5V
5.25
5
5.5
8,10
5.75
6
0
1
2
3
4
5
024
68
10
VGS=4.5V
5.25
5
5.5
6
Common source
Tc = 25°C
Pulse test
8,10
0.10
1.00
10.00
0.01
0.1
1
10
Common source
VGS=10V
Tc=25℃
Pulse test
ID − VDS
ID − VDS
ID − VGS
VDS − VGS
⎪Yfs⎪ − ID
RDS (ON) − ID
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN−SOURCE VOLTAGE VDS (V)
GATE−SOURCE VOLTAGE VGS (V)
GATE−SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
COMMON SOURCE
Tc
= 25°C
PULSE TEST
COMMON SOURCE
Tc
= 25°C
PULSE TEST
COMMON SOURCE
VDS = 20 V
PULSE TEST
COMMON SOURCE
Tc
= 25°C
PULSE TEST
COMMON SOURCE
VDS = 20 V
PULSE TEST
COMMON SOURCE
VGS = 10 V
Tc
= 25°C
PULSE TEST




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