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2SK3880 Datasheet(数据表) 1 Page - Toshiba Semiconductor

部件型号  2SK3880
说明  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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2SK3880 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SK3880
2005-01-18
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3880
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
High forward transfer admittance: |Yfs| = 5.2 S (typ.)
Low leakage current: IDSS = 100μA (max) (VDS = 640 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
800
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
800
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
6.5
Drain current
Pulse
(Note 1)
IDP
19.5
A
Drain power dissipation (Tc
= 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAR
375
mJ
Avalanche current
IAR
6.5
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.56
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
41.6
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
1
3
2




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