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2SK3880 Datasheet(数据表) 5 Page - Toshiba Semiconductor

部件型号  2SK3880
说明  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
下载  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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2SK3880 Datasheet(HTML) 5 Page - Toshiba Semiconductor

   
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2SK3880
2005-01-18
5
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
0.0
0.0
0.0
SINGLE PULSE
PDM
t
DUTY = t/T
th (ch-c) = 1.56°C/W
Duty = 0.5
0.2
0
50
100
150
200
250
300
350
400
25
50
75
100
125
150
0.01
0.1
1
10
100
1
10
100
1000
1 ms*
DC OPERATION
Tc = 25
°C
ID MAX (CONTINUOUS)
VDSS MAX
100
µs*
ID MAX (PULSED)
PULSE WIDTH tw (S)
rth − tw
EAS – Tch
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
−15 V
15 V
TEST CIRCUIT
WAVE FORM
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 16.1 mH
=
VDD
BVDSS
BVDSS
2
I
L
2
1
ΕAS
SAFE OPERATING AREA
DRAIN−SOURCE VOLTAGE VDS (V)
* SINGLE NONREPETITIVE PULSE
Tc = 25
°C
Curves must be derated linearly with
increase in temperature




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