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SM2G50US60 数据表(PDF) 2 Page - Fairchild Semiconductor |
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SM2G50US60 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page Characteristics C - E Breakdown Voltage Temperature Coeff. of Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Turn on Switching Loss Turn off Switching Loss Total Switching Loss Short Circuit withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Symbol BV CES ZV CES/ ZT J V GE(th) I CES I GES V CE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Min 600 - 5 - - - - - - - - - - - - - - 10 - - - Typ - 0.6 6 - - 2.1 2.7 4200 400 120 90 65 184 80 1.5 0.9 2.4 - 220 50 90 Max - - 8.5 250 100 2.7 - - - - - - - 250 - - 4.8 - 330 - - Units V V/ V uA nA V V pF pF pF ns ns ns ns mJ mJ mJ uS nC nC nC ELECTRICAL CHARACTERISTICS (IGBT PART) (Tc=25 ,Unless Otherwise Specified) Test Conditions V GE = 0V , IC = 250 V GE = 0V , IC = 1mA I C =50mA , VCE = VGE V CE = VCES , VGE = 0V V GE = VGES , VCE = 0V Ic=50A, V GE = 15V @Tc= 25 Ic=50A, V GE = 15V @Tc=100 V GE = 0V , f = 1( V CE = 30V V CC = 300V , IC = 50A V GE = 15V R G = 13 n Inductive Load Vcc = 300V, V GE = 15V @Tc = 100 Vcc = 300V V GE = 15V Ic = 50A IGBT MODULE SM2G50US60 Preliminary |
类似零件编号 - SM2G50US60 |
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类似说明 - SM2G50US60 |
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